SiC MOSFETs
The development of state-of-the-art SiC MOSFETs requires the seamless integration of several key disciplines, including device design, process integration, end-of-line testing, and field reliability engineering. While device design is a crucial factor in achieving outstanding performance, it is only one part of a development chain in which every element must be carefully optimized to meet the demanding robustness and reliability targets.
We provide comprehensive SiC MOSFET development services with a focus on achieving the optimal trade-off between low RDS(on), gate oxide reliability, and application-friendly switching characteristics. Our goal is to deliver devices that combine excellent electrical performance with long-term field reliability.
Services
Our expertise covers the entire development process, including:
- Epitaxial layer specification and optimization
- Device design and TCAD simulation
- Process integration support
- Electrical characterization and end-of-line test definition
- Failure analysis and root-cause investigation
- Interface to applications
- Reliability assessment and qualification support