Relaibility Engineering

Reliability is one of the most challenging and multidisciplinary aspects of power semiconductor development. Achieving long-term device robustness requires a thorough understanding of semiconductor physics, device design, manufacturing processes and the electrochemical mechanisms that can lead to degradation and failure over time.

We bring a proven track record in reliability engineering for power semiconductor devices. A particular area of expertise is the development of rugged and compact junction terminations capable of withstanding highly demanding environmental stress conditions, including HV-H3TRB qualification tests.

We also provide a strong background in switching-induced reliability effects, such as trench degradation during turn-off events.

By combining device physics, electrical characterization, simulation, and failure analysis, we help identify degradation mechanisms and implement effective design improvements at an early stage of development.

Services

• Reliable junction termination design, including passivation optimization
• Reliability test planning, setup, execution, and evaluation
• Investigation and mitigation of switching-induced degradation mechanisms, including trench degradation
• SiC gate oxide reliability assessment and burn-in testing
• HV cosmic ray ruggedness design and testing in collaboration with specialized external partners

The image below shows a typical test setup used for evaluating the cosmic ray capability of high-voltage power semiconductor devices. We offer both the design expertise required to develop cosmic-ray-rugged devices and the experience needed to plan, conduct, and interpret such qualification tests.